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PD - 9.802A
IRGPC50UD2
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
* Switching-loss rating includes all "tail" losses TM * HEXFRED soft ultrafast diodes * Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
C
UltraFast CoPack IGBT
VCES = 600V VCE(sat) 3.0V
G
@VGE = 15V, IC = 27A
E
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications.
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ T C = 25C IC @ T C = 100C ICM ILM IF @ T C = 100C IFM VGE PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
Max.
600 55 27 220 220 25 220 20 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Units
V
A
V W
C
Thermal Resistance
Parameter
RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
-- -- -- -- --
Typ.
-- -- 0.24 -- 6 (0.21)
Max.
0.64 0.83 -- 40 --
Units
C/W
g (oz)
Revision 1
C-725
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IRGPC50UD2
Electrical Characteristics @ T = 25C (unless otherwise specified) J
V(BR)CES
V(BR)CES/TJ
VCE(on)
Parameter Collector-to-Emitter Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage
VGE(th) VGE(th)/TJ gfe ICES VFM IGES
Gate Threshold Voltage Temp. Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
Min. Typ. Max. Units Conditions 600 -- -- V VGE = 0V, I C = 250A -- 0.60 -- V/C VGE = 0V, IC = 1.0mA -- 1.9 3.0 IC = 27A V GE = 15V -- 2.4 -- V IC = 55A See Fig. 2, 5 -- 1.9 -- IC = 27A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -13 -- mV/C VCE = VGE, IC = 250A 16 24 -- S VCE = 100V, I C = 27A -- -- 250 A VGE = 0V, V CE = 600V -- -- 6500 VGE = 0V, V CE = 600V, T J = 150C -- 1.3 1.7 V IC = 25A See Fig. 13 -- 1.2 1.5 IC = 25A, T J = 150C -- -- 100 nA VGE = 20V
Switching Characteristics @ T = 25C (unless otherwise specified) J
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During t b Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 110 17 53 73 71 210 150 1.4 1.6 3.0 73 67 360 230 4.5 13 2900 330 40 50 105 4.5 8.0 112 420 250 160 Max. Units Conditions 140 IC = 27A 21 nC VCC = 400V 70 See Fig. 8 -- TJ = 25C -- ns IC = 27A, V CC = 480V 320 VGE = 15V, R G = 5.0 280 Energy losses include "tail" and -- diode reverse recovery. -- mJ See Fig. 9, 10, 11, 18 4.5 -- TJ = 150C, See Fig. 9, 10, 11, 18 -- ns IC = 27A, V CC = 480V -- VGE = 15V, R G = 5.0 -- Energy losses include "tail" and -- mJ diode reverse recovery. -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz 75 ns TJ = 25C See Fig. 160 TJ = 125C 14 I F = 25A 10 A TJ = 25C See Fig. 15 TJ = 125C 15 V R = 200V 375 nC TJ = 25C See Fig. 1200 TJ = 125C 16 di/dt = 200A/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17 Pulse width 5.0s, single shot.
Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 )
VCC=80%(V CES), VGE=20V, L=10H, R G= 5.0, ( See fig. 19 ) Pulse width 80s; duty factor 0.1%.
C-726
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IRGPC50UD2
40
D u ty c ycle : 5 0 % T J = 1 25 C T sin k = 9 0 C G a te d rive a s sp ecified Tu rn -on los se s inc lu de e ffe cts o f rev erse recov ery P ower D issipation = 40W
30
Load Current (A)
20
6 0 % o f ra te d vo lt a g e
10
0 0.1 1 10
A
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I RMS of fundamental)
1000
1000
TJ = 25 C
100
IC , Collector-to-Emitter Current (A)
I C , Collector-to-E m itter C urrent (A)
100
TJ = 150C TJ = 25C
TJ = 1 50 C
10
10
1 0 .1 1
V G E = 15 V 20 s P UL S E W ID TH
10
1 5 10
VCC = 100V 5s PULSE WIDTH
15 20
V C E , C o llector-to-E m itter V oltage (V )
VGE, Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
C-727
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IRGPC50UD2
60
50
VC E , Co lle ctor-to-E m itter V oltage (V )
V G E = 15 V
3.0
V G E = 15 V 80 s P UL S E W ID TH
M axim um DC C ollector C urrent (A)
2.5
I C = 5 4A
40
30
2.0
I C = 27 A
1.5
20
10
I C = 14 A
0 25 50 75 100 125 150
1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
T C , C ase Tem perature (C )
TC , C ase Tem perature (C )
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature
1
T herma l R espo nse (Z thJ C )
D = 0.5 0
0.2 0
0.1
0.1 0 0 .0 5 SIN G LE P U LSE (TH ER MA L R E SP O N SE )
N o te s : 1 . D u ty fa c to r D = t 1 /t 2
PD M
t
1 t2
0.02 0.01
0.01 0.00001
2 . P e a k T J = P D M x Z thJ C + T C
0.0 001
0.001
0.01
0.1
1
10
t 1 , R ectangular Pulse D ura tion (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-728
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IRGPC50UD2
7000 20
6000
C , C apacitance (pF )
5000
4000
Cies
3000
V G E , G a te -to -E m itte r V o lta g e (V )
V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc
V C E = 48 0V I C = 27 A
16
12
8
2000
Coes
4
1000
Cres
0 1 10 1 00 0 0 30 60 90 12 0
V C E , C ollector-to-E m itter V oltage (V )
Q g , T o tal G a te C h a rg e (n C )
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
3.5
Total Switching Losses (mJ)
3.4
Total Switching Losses (mJ)
VCC VGE TC IC
= 480V = 15V = 25C = 27A
100
R G = 5 V GE = 15V V CC = 480V I C = 54A I C = 27A I C = 14A
3.3
10
3.2
3.1
1
3.0
2.9 0 10 20 30 40 50 60
0.1 -60 -40 -20 0 20 40 60 80
A
100 120 140 160
R G , Gate Resistance ()
W
TC , Case Temperature (C)
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Case Temperature
C-729
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IRGPH50UD2
12
8
I C , Collector-to-E m itter C urrent (A)
Total Switching Losses (mJ)
10
RG TC V CC V GE
= 5 = 150C = 480V = 15V
1000
VG E E 2 0V G= T J = 125 C
100
S A FE O P E R A TING A R E A
6
4
10
2
0 0 20 40
A
60
1 1 10 100 1000
I C , Collector-to-Emitter Current (A)
V C E , Collecto r-to-E m itter V oltage (V )
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
Instantaneous Forward Current - I F (A)
TJ = 150C TJ = 125C
10
TJ = 25C
1 0.6
1.0
1.4
1.8
2.2
2.6
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-730
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IRGPC50UD2
140 100
120
VR = 200V TJ = 125C TJ = 25C
VR = 200V TJ = 125C TJ = 25C
100
I IRRM - (A)
I F = 50A I F = 25A
10
t rr - (ns)
80
IF = 50A I F = 25A
I F = 10A
60
IF = 10A
40
20 100
di f /dt - (A/s)
1000
1 100
1000
di f /dt - (A/s)
Fig. 14 - Typical Reverse Recovery vs. dif/dt
Fig. 15 - Typical Recovery Current vs. dif/dt
1500
10000
VR = 200V TJ = 125C TJ = 25C
1200
VR = 200V TJ = 125C TJ = 25C
900
I F = 50A
di(rec)M/dt - (A/s)
Q RR - (nC)
1000
IF = 10A
600
IF = 25A
I F = 25A
300
I F = 10A
0 100
IF = 50A
1000 100 100
di f /dt - (A/s)
di f /dt - (A/s)
1000
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
C-731
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IRGPC50UD2
90% Vge Same type device as D.U.T. +Vge
Vce
80% of Vce
430F D.U.T.
Ic
10% Vce Ic
90% Ic 5% Ic
td(off)
tf
Eoff =
Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf
t1 t2
t1+5S Vce ic dt t1
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
GATE VOLTAGE D.U.T. 10% +Vg +Vg tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Eon = Vce ie dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 10% Irr Vcc Vpk Irr trr Ic Qrr =
trr id dt tx
t4 Erec = Vd id dt t3
t1
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining E on, td(on), tr
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining E rec, trr, Qrr, Irr
Refer to Section D for the following: Appendix D: Section D - page D-6 Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 3 - JEDEC Outline TO-247AC
C-732
Section D - page D-13
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